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2SK3018
Transistor
Small switching (30V, 0.1A)
2SK3018
Applications Interfacing, switching (30V, 100mA) External dimensions (Unit : mm)
2.00.2 1.30.1 0.90.1 0.2 0.70.1 0.65 0.65
Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel.
1.250.1
2.10.1
(1)
(1)
(2) (2)
0 to 0.1
(3)
0.3+0.1 0.150.05 -0 All terminals have same dimensions
0.1 to 0.4
(3)
ROHM : UMT3 E I A J : SC-70
Abbreviated symbol : KN
(1) Source (2) Gate (3) Drain
Structure Silicon N-channel MOSFET
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Total power dissipation (Tc=25C) Channel temperature Storage temperature Symbol VDSS VGSS ID IDP1 PD2 Tch Tstg Limits 30 20 100 400 200 150 -55 to +150 Unit V V mA mA mW C C
Equivalent circuit
Drain
Gate
Gate
1 Pw10s, Duty cycle1% 2 With each pin mounted on the recommended lands.
Protection Diode
Source
A protection diode is included between the gate
and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded.
Rev.A
1/4
2SK3018
Transistor
Electrical characteristics (Ta=25C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) RDS(on) |Yfs | Ciss Coss Crss td(on) tr td(off) tr Min. - 30 - 0.8 - - 20 - - - - - - - Typ. - - - - 5 7 - 13 9 4 15 35 80 80 Max. 1 - 1 1.5 8 13 - - - - - - - - Unit A V A V mS pF pF pF ns ns ns ns Conditions VGS = 20V, VDS = 0V ID = 10A, VGS = 0V VDS = 30V, VGS = 0V VDS = 3V, ID = 100A ID = 10mA, VGS = 4V ID = 1mA, VGS = 2.5V VDS = 3V, ID = 10mA VDS = 5V VGS = 0V f = 1MHz ID = 10mA, VDD VGS = 5V RL = 500 RG = 10 5V
Packaging specifications
Package Type Code Basic ordering unit (pieces) 2SK3018 Taping T106 3000
Electrical characteristic curves
GATE THRESHOLD VOLTAGE : VGS(th) (V)
0.15
200m
4V
DRAIN CURRENT : ID (A)
3V
DRAIN CURRENT : ID (A)
3.5V
Ta=25C Pulsed
100m 50m 20m 10m 5m 2m 1m
0.5m
VDS=3V Pulsed
2
VDS=3V ID=0.1mA Pulsed
1.5
0.1
2.5V
1
0.05
2V VGS=1.5V
Ta=125C 75C 25C -25C
0.5
0.2m
0 0
1
2
3
4
5
0.1m 0
1
2
3
4
0 -50 -25
0
25
50
75
100
125 150
DRAIN-SOURCE VOLTAGE : VDS (V)
GATE-SOURCE VOLTAGE : VGS (V)
CHANNEL TEMPERATURE : Tch (C)
Fig.1 Typical output characteristics
Fig.2 Typical transfer characteristics
Fig.3 Gate threshold voltage vs. channel temperature
Rev.A
2/4
2SK3018
Transistor
50
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
20 10 5
Ta=125C 75C 25C -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
20 10 5
Ta=125C 75C 25C -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
VGS=4V Pulsed
50
VGS=2.5V Pulsed
15
Ta=25C Pulsed
10
2 1
0.5 0.001 0.002
2 1 0.5 0.001 0.002
5
ID=0.1A
ID=0.05A
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0 0
5
10
15
20
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Static drain-source on-state resistance vs. drain current ( )
Fig.5 Static drain-source on-state resistance vs. drain current ()
Fig.6 Static drain-source on-state resistance vs. gate-source voltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
REVERSE DRAIN CURRENT : IDR (A)
9
8 7
ID=100mA
VGS=4V Pulsed
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
0.5
VDS=3V Pulsed
200m
0.2 0.1 0.05
0.02 0.01
100m 50m
VGS=0V Pulsed
6
5 4
ID=50mA
Ta=-25C 25C 75C 125C
20m 10m 5m 2m 1m 0.5m 0.2m 0.1m
Ta=125C 75C 25C -25C
3
2 1
0.005
0.002
0 -50 -25
0
25
50
75
100 125
150
0.001 0.0001 0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
0
0.5
1
1.5
CHANNEL TEMPERATURE : Tch (C)
DRAIN CURRENT : ID (A)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.7 Static drain-source on-state resistance vs. channel temperature
Fig.8 Forward transfer admittance vs. drain current
Fig.9 Reverse drain current vs. source-drain voltage ( )
REVERSE DRAIN CURRENT : IDR (A)
200m
100m 50m
Ta=25C Pulsed
50
SWITCHING TIME : t (ns)
20
Ta=25C f=1MHZ VGS=0V
1000
tf
500
td(off)
CAPACITANCE : C (pF)
20m 10m 5m 2m 1m 0.5m 0.2m 0.1m
Ciss
200 100 50
tr td(on)
Ta=25C VDD=5V VGS=5V RG=10 Pulsed
10 5
VGS=4V
0V
Coss Crss
20 10
5
2 1
0.5 0.1
0
0.5
1
1.5
0.2
0.5
1
2
5
10
20
50
2 0.1 0.2
0.5
1
2
5
10
20
50
100
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (mA)
Fig.10 Reverse drain current vs. source-drain voltage ( )
Fig.11 Typical capacitance vs. drain-source voltage
Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms)
Rev.A
3/4
2SK3018
Transistor
Switching characteristics measurement circuit
Pulse width 50% 10% 10% 90% 50%
VGS
VGS
ID D.U.T. RL VDS
RG
VDS
10% 90% 90%
td(off) tf toff
VDD
td(on) ton tr
Fig.13 Switching time measurement circuit
Fig.14 Switching time waveforms
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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